| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method capable of simply obtaining a diffusion constant of minority carriers in a semiconductor substrate. <P>SOLUTION: A method for analyzing a semiconductor substrate includes: measuring a primary mode lifetime τ<SB POS="POST">1</SB><SP POS="POST">(1)</SP>(104) of a first semiconductor substrate of which a surface recombination speed of a first surface and a second surface have been adjusted to 2.8×10<SP POS="POST">4</SP>[cm/sec] or more, and a primary mode lifetime τ<SB POS="POST">1</SB><SP POS="POST">(2)</SP>(106) of a second semiconductor substrate of which a surface recombination speed of one surface of a first surface or a second surface has been adjusted to 2.8×10<SP POS="POST">4</SP>[cm/sec] or more, and the surface recombination speed of the other surface thereof has been adjusted to 10[cm/sec] or less, with a μ-PCD method; and substituting the obtained τ<SB POS="POST">1</SB><SP POS="POST">(1)</SP>, τ<SB POS="POST">1</SB><SP POS="POST">(2)</SP>and the thickness W of the semiconductor substrate into the following approximate expression to simply obtain a diffusion constant D of minority carriers in the semiconductor substrate. <P>COPYRIGHT: (C)2013,JPO&INPIT |
