发明名称 |
SEMICONDUCTOR DEVICES USING SHAPED GATE ELECTRODES |
摘要 |
A device includes a semiconductor substrate and a gate insulation film lining a trench in an active region of the substrate. A gate electrode pattern is recessed in the trench on the gate insulation film and has an upper surface that has a nonuniform height. A dielectric pattern may be disposed on the gate electrode pattern in the trench.
|
申请公布号 |
US2013043519(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201213589339 |
申请日期 |
2012.08.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;MOON JOON-SEOK;KAHNG JAE-ROK;LEE JIN-WOO;LEE SUNG-SAM;WOO DONG-SOO;JUNG KYOUNG-HO;JUNG JUNG-KYU |
发明人 |
MOON JOON-SEOK;KAHNG JAE-ROK;LEE JIN-WOO;LEE SUNG-SAM;WOO DONG-SOO;JUNG KYOUNG-HO;JUNG JUNG-KYU |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|