| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing an aluminum nitride single crystal, which can manufacture a high-quality aluminum nitride single crystal. <P>SOLUTION: The method for manufacturing an aluminum nitride single crystal includes a crystal growth step in which while a nitrogen gas is introduced in a growth vessel 2 trough an inner gas introduction section 2F and a gas in the growth vessel 2 is discharged through a gas discharge section 2e, a raw material composed of an aluminum nitride accommodated in the growth vessel 2 is sublimed and a crystal 12 is grown on a seed crystal 10 in the growth vessel 2 to thereby obtain the aluminum nitride single crystal, wherein in the crystal growth step, an outer side gas composed of a nitrogen gas or an inert gas to the production reaction of aluminum nitride is introduced in a reaction tube 3 accommodating the growth vessel 2 through an outer side gas introduction section 3b and made to flow outside the gas discharge section 2e. <P>COPYRIGHT: (C)2013,JPO&INPIT |
