发明名称 |
POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS |
摘要 |
There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.
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申请公布号 |
US2013045444(A1) |
申请公布日期 |
2013.02.21 |
申请号 |
US201213526057 |
申请日期 |
2012.06.18 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;TANIGUCHI RYOSUKE;SEKI AKIHIRO;FUNATSU KENJI;KOBAYASHI KATSUHIRO |
发明人 |
TANIGUCHI RYOSUKE;SEKI AKIHIRO;FUNATSU KENJI;KOBAYASHI KATSUHIRO |
分类号 |
G03F7/027;G03F7/20 |
主分类号 |
G03F7/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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