发明名称 PHOTOLUMINESCENCE IMAGING OF DOPING VARIATIONS IN SEMICONDUCTOR WAFERS
摘要 <p>Photoluminescence-based methods are presented for facilitating alignment of wafers during metallisation in the manufacture of photovoltaic cells with selective emitter structures, and in particular for visualising the selective emitter structure prior to metallisation. In preferred forms the method is performed in-line, with each wafer inspected after formation of the selective emitter structure to identify its location or orientation. The information gained can also be used to reject defective wafers from the process line or to identify a systematic fault or inaccuracy with the process used to form the patterned emitter structure. Each wafer can additionally be inspected via photoluminescence imaging after metallisation, to determine whether the metal contacts have been correctly positioned on the selective emitter structure. The information gained after metallisation can also be used to provide feedback to the upstream process steps.</p>
申请公布号 WO2013023241(A1) 申请公布日期 2013.02.21
申请号 WO2012AU00940 申请日期 2012.08.10
申请人 BT IMAGING PTY LTD;WEBER, JUERGEN 发明人 WEBER, JUERGEN
分类号 G01N21/64 主分类号 G01N21/64
代理机构 代理人
主权项
地址