| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to regularly maintain the distance between an N-type electrode and a P-type electrode and to improve the degree of current dispersion. CONSTITUTION: An N-type semiconductor layer(240) is formed on a substrate. An active layer(250) is formed on a first semiconductor layer. A P-type semiconductor layer is formed on the active layer. A transparent electrode layer(270) is formed on a second semiconductor layer. A P-type electrode is formed on a transparent electrode layer. An N-type electrode is formed on the N-type semiconductor layer where the active layer and the p-type semiconductor layer are not formed. The P-type electrode includes a P-type electrode pad, a P-type connecting electrode(284), and a P-type branch electrode.
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