发明名称 |
Method of etching a high aspect ratio contact |
摘要 |
Methods and an etch gas composition for etching a contact opening in a dielectric layer are provided. Embodiments of the method use a plasma generated from an etch gas composed of C4F8 and/or C4F6, an oxygen source, and a carrier gas in combination with tetrafluoroethane (C2F4) or a halofluorocarbon analogue of C2F4. |
申请公布号 |
GB2468458(B) |
申请公布日期 |
2013.02.20 |
申请号 |
GB20100011217 |
申请日期 |
2008.12.16 |
申请人 |
MICRON TECHNOLOGIES, INC. |
发明人 |
RUSSELL A BENSON;TED TAYLOR;MARK KIEHLBAUCH |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|