发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device having a non-volatile memory and a method of manufacturing the same are provided. The semiconductor device includes a base material and a stack structure. The stack structure disposed on the base material at least includes a tunneling layer, a trapping layer and a dielectric layer. The trapping layer is disposed on the tunneling layer. The dielectric layer has a dielectric constant and is disposed on the trapping layer. The dielectric layer is transformed from a first solid state to a second solid state when the dielectric layer undergoes a process.
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申请公布号 |
US8378410(B2) |
申请公布日期 |
2013.02.19 |
申请号 |
US201213489611 |
申请日期 |
2012.06.06 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD.;LAI SHENG-CHIH;LUE HANG-TING |
发明人 |
LAI SHENG-CHIH;LUE HANG-TING |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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