发明名称 |
SEMICONDUCTOR DEVICE HAVING A THROUGH-SUBSTRATE VIA |
摘要 |
Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers. |
申请公布号 |
US2013037948(A1) |
申请公布日期 |
2013.02.14 |
申请号 |
US201113205682 |
申请日期 |
2011.08.09 |
申请人 |
MAXIM INTEGRATED PRODUCTS, INC.;SAMOILOV ARKADII V.;PARENT TYLER;YING XUEJUN |
发明人 |
SAMOILOV ARKADII V.;PARENT TYLER;YING XUEJUN |
分类号 |
H01L23/485;H01L21/28 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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