| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element with enhanced light extraction efficiency and luminance. <P>SOLUTION: A semiconductor light-emitting element includes a light-emitting layer 40 composed of a group III-V compound semiconductor, a first electrode 20 having a reflective metal layer, an insulating layer 90 having openings, a first-conductivity-type layer 37, a second-conductivity-type layer 50, and a second electrode 60. The first-conductivity-type layer is provided on the first electrode and under the light-emitting layer, and is composed of a group III-V compound semiconductor having a larger band-gap energy than the light-emitting layer. The first-conductivity-type layer includes a first contact layer 32, a composition gradient layer 31, and a first cladding layer 29. The second-conductivity-type layer is provided between the light-emitting layer and the second electrode, and has a current diffusion layer 54 and a second contact layer 56. The second electrode has a pad portion 60a and thin-line portions 60b extending from the pad portion toward the outside on the second contact layer. As viewed from the top, the openings of the insulating layer and the second contact layer are not overlapped. <P>COPYRIGHT: (C)2013,JPO&INPIT |
