Method for manufacturing semiconductor device e.g. MOSFET, involves removing semiconductor body from side up to range defined by foreign substances or PN junction, where PN junction is defined by foreign substances

摘要

The method involves implanting foreign substances (105) into a semiconductor body (100) through a side (101) of the semiconductor body. A drift layer is formed on the side of the semiconductor body. The semiconductor body is removed from the side up to a range defined by the foreign substances or PN junction, where the side of the body is arranged opposite to another side (102). The PN junction and dopant concentration are defined by the foreign substances. A semiconductor layer is formed, and the foreign substances are implanted into the semiconductor layer. An independent claim is also included for a semiconductor device.