| 摘要 |
<p>Provided is a TFT pixel unit, including a scanning line, a first insulation layer, an information line, a source section, a semiconductor layer, a drain section and a pixel electrode. The first insulation layer is provided on the scanning line and coats the inside surface thereof. The information line and scanning line are interwoven and insulated from each other so as to co-define a pixel area. The drain section extends from one side of the information line and is provided on the first insulation layer. The semiconductor layer is provided on the top surface of the drain section. The source section is provided on the top surface of the semiconductor layer. The drain section, the semiconductor layer and the source section are adjacent to the inside surface of the scanning line. The pixel electrode is provided within a pixel area and connected to the source section. The information line, drain section, semiconductor layer and source section form a TFT switch of a vertical stack structure, reducing the loss of aperture ratio.</p> |
