TRANSISTOR WITH CHANNEL INCLUDING OXIDE LAYER AND QUANTUM LAYER

摘要

Disclosed is a transistor including a channel comprising an oxide layer and a quantum dot layer. The disclosed transistor includes: a back gate substrate; a gate insulation layer on the substrate; a channel layer having a stacked structure comprising the oxide layer and a semiconductor nanolayer, on the gate insulation layer; and a source electrode and a drain electrode connected to both ends of the channel layer respectively. The semiconductor nanolayer can be a quantum dot layer or a semiconductor nanowire layer.