HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A high electron mobility transistor and a manufacturing method thereof are provided to prevent the deterioration of a breakdown voltage due to a substrate by forming a channel forming layer and a channel supply layer on the substrate with high dielectric constant. CONSTITUTION: A second HEMT(High Electron Mobility Transistor) includes a second substrate(S2) and an HEMT laminate(30). The HEMT laminate is formed on the second substrate. The second substrate includes a base plate(26), a bonding metal layer(24), and a dielectric layer(22). The bonding metal layer is made of alloy including aluminum, copper, gold, or silicon. The bonding metal layer of the second substrate is connected to a drain electrode of the HEMT laminate.