发明名称 Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors
摘要 The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.
申请公布号 US8373536(B2) 申请公布日期 2013.02.12
申请号 US201213481183 申请日期 2012.05.25
申请人 INFINEON TECHNOLOGIES AG;ZIMMER JUERGEN;BEVER THOMAS 发明人 ZIMMER JUERGEN;BEVER THOMAS
分类号 H01C10/00 主分类号 H01C10/00
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