发明名称 |
METHOD FOR MAKING A DISILICIDE |
摘要 |
Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.
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申请公布号 |
US2013034944(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201213646429 |
申请日期 |
2012.10.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;TAIWAN SEMICONDUCTOR MANUFACTURING |
发明人 |
NIEH CHUN-WEN;HSU HUNG-CHANG;TSAI WEN-CHI;WANG MEI-YUN;WU CHII-MING;LIN WEI-JUNG;CHANG CHIH-WEI |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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