发明名称 A HIGH EFFICIENCY POWER AMPLIFIER
摘要 <p>A power amplifier circuit (100) comprises a cross-coupled cascode transistor unit (110) comprising a pair of cross-coupled cascode transistors (112), a cross-coupled switching transistor unit (120) comprising a pair of cross-coupled switching transistors (122), and an RF current generator (130). RF current generator (130) generates a differential RF injection current, while switching transistor unit (120) amplifies the injection current to generate an amplified injection current at the wideband node of the amplifier circuit (100) and the cascode transistor unit (110) further amplifies the injection current to generate the desired amplified signal at the output of the amplifier circuit (100). The output signal amplitude generally depends on the differential injection current and the supply voltage V00 applied to the power amplifier circuit (100).</p>
申请公布号 WO2013017407(A1) 申请公布日期 2013.02.07
申请号 WO2012EP64032 申请日期 2012.07.17
申请人 ST-ERICSSON SA;SJOELAND, HENRIK;LINDSTRAND, JONAS;BRYANT, CARL 发明人 SJOELAND, HENRIK;LINDSTRAND, JONAS;BRYANT, CARL
分类号 H03F3/24;H03F1/52;H03F1/56;H03F3/217;H03F3/45 主分类号 H03F3/24
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