The emission sensor includes the nanocluster layer made of graphene tape laid on the h-BN hexagonal boron nitride stabilizing buffer layer. These layers are located inside the monoblock with external isolating coating made of material neutral to emissions. The graphene tape is terminated with electrodes made of highly conductive material. The sensor is made at least of one turn of the continuous graphene tape with the buffer layer on the dielectric wafer. The Si/Si02 dielectric wafer is made of silicon covered with silicone oxide film at the buffer layer side. Wavelike turns of the continuous graphene tape with hexagonal boron nitride buffer layer are compressed or at least one turn of the continuous graphene tape with hexagonal boron nitride buffer layer is helical. The graphene tape is uniformly laid on the hexagonal boron nitride buffer layer. The graphene layer on the hexagonal boron nitride buffer layer, as well as the silicone wafer and the silicone oxide film are solid. The electrodes are made of highly conductive materials of the following group.
