RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A variable resistance memory device and a manufacturing method thereof are provided to reduce the number of leakage current paths on a non-selected memory cell by using an upper and a lower electrode having a disconnection part. CONSTITUTION: A substrate having multiple first contacts(21A) and multiple second contacts(21B) is prepared. A line pattern including a first electrode, a resistance part and a second electrode is formed. A first contact hole(H1) which exposes the second contact is formed. An insulating spacer is formed in the side wall of the contact hole. A third contact is formed in the first contact hole having the insulating spacer.