| 摘要 |
<p>PURPOSE:To prevent the clogging of a main duct and to conserve the cost of exhaust treatment, by providing a waste gas treatment part, wherein waste gas is treated with an adsorbent and breakthrough is detected by heat of adsorption, to the exhaust passage of waste gas from a dry etching apparatus. CONSTITUTION:In a semiconductor wafer manufacturing apparatus for applying dry etching treatment to a wafer, reactive gas such as BCl3 is exhausted by a mechanical booster pump 6 and a rotary pump 7 for evacuating an etching chamber 1. The reactive gas is adsorbed by the adsorbent 12 allowed to pack the waste gas treatment part 11 connected to the exhaust pipe 16 of the pump 7 while the treated gas is exhausted to a main exhaust duct from an exhaust duct 10. When the adsorbing zone advances to a heat-of-adsorption detection part 13 immediately before breakthrough, the heat of adsorption generated when the reactive gas was adsorbed is detected by a temp. sensor 14 and an alarm controller 15 and the replacement period of the adsorbent can be judged by the automatic detection of breakthrough.</p> |
