| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a high drain current in a field-effect transistor using a nitride semiconductor. <P>SOLUTION: The distance of a drain region 123 between a drain electrode 107 and a gate region 121 is longer than the distance of a source region 122 between a source electrode 106 and the gate region 121. Further, a gate electrode 104 is formed to have an extension portion 141 extending from the gate region 121 to the source electrode 106 side. With the extension portion 141 of the gate electrode 104 to the source electrode 106 side, the electron concentration of a channel layer 101 in the source region 122 can be increased by appling a voltage to the gate electrode 104. <P>COPYRIGHT: (C)2013,JPO&INPIT |
