| 摘要 |
PURPOSE: A nitride semiconductor light emitting device is provided to improve internal quantum efficiency while having high recombination efficiency in an active layer. CONSTITUTION: A nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer(103), a p-type nitride semiconductor layer(107), and an active layer(105). The active layer is formed between the n-type nitride semiconductor layer and p-type nitride semiconductor layer and has InGaN / AlGaN superlattice structure which is formed with a plurality of inGaN quantum-well layers(105a) and AlGaN quantum barrier layers(105b). The AlGaN quantum barrier layers has enough thickness for a carrier which is inputted from the n-type and p-type nitride semiconductor layer to be tunneled and has Al concentration which is diminished toward p-type nitride semiconductor layer. |
