| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodiode having a lamination structure of a compound semiconductor, preventing transmission of incident light from a back face of a substrate and having an output signal greater than before. <P>SOLUTION: A mesa-type photodiode includes a substrate 401, and a light-receiving portion provided on the substrate 401 and composed of a compound semiconductor, in which a top face and side faces of a mesa (a PN step) region are entirely covered with an electrode 407. Accordingly, the top face and side faces of the PN mesa including the light-receiving portion can be entirely covered with the electrode 407, preventing the transmission of incident light from a back face of the substrate, and allowing the incident light to be reflected by an interface between the PN mesa and the electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
