| 发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide (SiC) semiconductor device which can be formed with a small number of steps and has a temperature detection element excellent in heat resistance. <P>SOLUTION: A SiC semiconductor device comprises: a semiconductor element formed on a SiC substrate 1; a source electrode 15 and a gate pad 16 formed using a wiring layer having a barrier metal 14 on its bottom surface; and a temperature-measuring resistor 20 formed using a part of the barrier metal 14 of the wiring layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013026563(A) |
申请公布日期 |
2013.02.04 |
| 申请号 |
JP20110162204 |
申请日期 |
2011.07.25 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
ORITSUKI YASUNORI;YUYA NAOKI;TARUI YOICHIRO |
| 分类号 |
H01L27/04;H01L21/28;H01L29/06;H01L29/12;H01L29/41;H01L29/417;H01L29/78 |
主分类号 |
H01L27/04 |
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