| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable reduction of melted extraneous materials in dicing of semiconductor wafer. <P>SOLUTION: A first protection film is formed on the surface 7b of a semiconductor wafer 7, and then a first laser beam and a second laser beam are scanned along chip areas 7d, 7e in a scribe region 7f to form grooves 7s, 7t. Thereafter, a protection film 7u is disposed in each of the grooves 7s, 7t, and a laser beam 18 is scanned in the area between the grooves 7s, 7t under the state that the grooves 7s, 7t formed with the first laser beam and the second laser beam are covered by the protection film 7u, thereby removing a part of the scribe region 7f. <P>COPYRIGHT: (C)2013,JPO&INPIT |
