VCSEL WITH GAIN TAILORING BY APERTURES WITH DIFFERENT DIAMETERS IN THE BOTTOM P-DBR

摘要

The present invention relates to a semiconductor laser device, in particular a V(E)CSEL,using current-limiting apertures to tailor the gain profile of the laser. The laser comprises a layer stack sandwiched between a n-contact (7) and a p-contact (2), said layer stack at least containing an active region (5) and a p-doped semiconductor mirror (1) arranged on a p-doped side of the layer stack. At least two current-limiting apertures (3, 4) are arranged on the p-doped side, a second (4) of said current-limiting apertures being closer to the active region (5) and having a larger aperture size than a first(3) of said current- limiting apertures. With such a structure of the semiconductor laser a nearly gaussian carrier density profile, a good heat dissipation and an improved laser performance can be achieved.