SWITCHING DEVICE AND RESISTANCE CHANGE MEMORY DEVICE USING THE SAME

摘要

A switching device that provides bipolar current paths and a resistance change memory device using the switching device. The switching device includes a first electrode, a second electrode, and an amorphous carbon layer interposed between the first electrode and the second electrode and configured to control a bipolar current to flow therethrough in response to a voltage applied between the first electrode and the second electrode.