COPPER MATERIAL FOR SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a copper material for sputtering target which reduces the frequency of abnormal electrical discharge even when applying high electrical power and prevents the occurrence of splash or the like in preparation of wiring on a large-scaled substrate used for a TFT liquid crystal panel or the like through a sputtering process.

SOLUTION: The copper material for sputtering target comprises a pure copper having purity of ≥99.99%, and is characterized in that the average size of void and inclusion defect is ≤30 μm, and the number of defects is 10 pieces/m2per unit area of plane set for sputtering.

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