发明名称 METHODS AND SYSTEMS FOR PATTERN DESIGN WITH ADJUSTED RESPONSE TO WAVEFRONT ABERRATION
摘要 <P>PROBLEM TO BE SOLVED: To provide methods and systems for designing gauge patterns that are extremely sensitive to parameter variations, and thus robust against random and repetitive measurement errors in calibration of a lithographic process utilized to image a target design having a plurality of features. <P>SOLUTION: The method may include identifying most sensitive line width/pitch combination with optimal assist feature placement, which leads to most sensitive CD (or other lithography response parameter) changes against lithography process parameter variations, such as wavefront aberration parameter variations. The method may also include designing gauges which have a plurality of test patterns, such that a combined response of the gauge can be adjusted to generate a specific response to wavefront-related or other lithographic process parameters. The sensitivity against parameter variations leads to robust performance against random measurement error and/or any other measurement errors. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013021321(A) 申请公布日期 2013.01.31
申请号 JP20120148374 申请日期 2012.07.02
申请人 ASML NETHERLANDS BV 发明人 FENG HANYING;CAO YU;YE JUN;TSAN YUPIN
分类号 H01L21/027;G03F1/36 主分类号 H01L21/027
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