发明名称 |
SILICON CARBIDE SEMICONDUCTOR DEVICE |
摘要 |
An SiC semiconductor device includes a semiconductor element formed in an SiC substrate, a source electrode and a gate pad formed by using an interconnect layer having barrier metal provided at the bottom surface thereof, and a temperature measuring resistive element formed by using part of the barrier metal in the interconnect line. |
申请公布号 |
US2013026494(A1) |
申请公布日期 |
2013.01.31 |
申请号 |
US201213417755 |
申请日期 |
2012.03.12 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION;ORITSUKI YASUNORI;YUTANI NAOKI;TARUI YOICHIRO |
发明人 |
ORITSUKI YASUNORI;YUTANI NAOKI;TARUI YOICHIRO |
分类号 |
H01L29/24 |
主分类号 |
H01L29/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|