发明名称
摘要 PROBLEM TO BE SOLVED: To provide a (co)polymer for a resist which ensures high sensitivity and/or resolution, when it is used in DUV excimer laser lithography or electron beam lithography. SOLUTION: The (co)polymer contains at least one monomeric unit selected from among monomeric units, having an alicyclic skeleton and monomeric units having a lactone skeleton and an end group of formula (1) (where R1 and R2 are each H, a 1-10C alkyl, -COO-RA, -X-COO-RA, -CONRB-RA,-X-CONRB- RA, -NRB-RA or -X-NRB-RA; R3 is cyano or a 2-10C cyanoalkyl; X is a 1-10C alkylene; and RA and RB are each H or a 1-10C alkyl) which is not included in the ends of each molecule.
申请公布号 JP5132850(B2) 申请公布日期 2013.01.30
申请号 JP20000392856 申请日期 2000.12.25
申请人 发明人
分类号 G03F7/039;C08F2/38;C08F20/26;C08L33/04;G03F7/033;H01L21/027 主分类号 G03F7/039
代理机构 代理人
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