发明名称 APPRATUS FOR MAKING THIN FILM
摘要 PURPOSE: A thin film deposition apparatus is provided to improve lifetime of a nozzle by reducing deposition of reactant in the nozzle by controlling the temperature of a reaction gas supply part. CONSTITUTION: A thin film deposition apparatus comprises an internal reactor(110), a heating part, a reaction gas supplying part(130), an exhaust gas-discharging part, and driving part. The internal reactor forms a reaction space. The heating part is formed near the internal reactor. The reaction gas supplying part penetrates through the internal reactor and supplies reaction gas to the reaction space. The exhaust gas-discharging gas is installed in the opposite side of the reaction gas supplying part. The driving part supports and rotates the deposition object accepting into the reaction space. The reaction gas supplying part controls the inner temperature of the internal reactor.
申请公布号 KR20130011546(A) 申请公布日期 2013.01.30
申请号 KR20110072770 申请日期 2011.07.22
申请人 SEMIMATERIALS. CO., LTD.;PARK, KUN 发明人 PARK, JONG HOON;LEE, GUN TEK;PARK, JUNG NAM;WOO, JI HOON;PARK, KUN
分类号 C23C16/44;C23C16/455;H01L21/205 主分类号 C23C16/44
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