| 摘要 |
A nonvolatile memory device comprises a semiconductor substrate comprising alternating, parallel active regions and isolation regions; first and second selection lines intersecting the active regions and the isolation regions; first junctions formed in the active regions between the first and second selection lines; spacers formed on sidewalls of the first and second selection lines; second junctions deeper than the first junctions formed in the first junctions, respectively; contact plugs coupled to one side of the respective second junctions; and dummy plugs coupled second sides of the respective second junctions.
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