| 发明名称 |
METHOD OF FORMING LOW CAPACITANCE ESD DEVICE AND STRUCTURE THEREFOR |
| 摘要 |
<p>In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.</p> |
| 申请公布号 |
HK1128821(A1) |
申请公布日期 |
2013.01.25 |
| 申请号 |
HK20090106792 |
申请日期 |
2009.07.24 |
| 申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. |
发明人 |
THOMAS KEENA;KI CHANG;FRANCINE Y. ROBB;MINGJIAO LIU;ALI SALIH;JOHN MICHAEL PARSEY JR.;GEORGE CHANG |
| 分类号 |
H01L |
主分类号 |
H01L |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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