发明名称 PIEZOELECTRIC LATERALLY VIBRATING RESONATOR STRUCTURE GEOMETRIES FOR SPURIOUS FREQUENCY SUPPRESSION
摘要 <p>This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a resonator structure includes a first conductive layer of electrodes and a second conductive layer of electrodes. A piezoelectric layer including a piezoelectric material is disposed between the first conductive layer and the second conductive layer. One or more trenches can be formed in the piezoelectric layer on one or both sides in space regions between the electrodes. In some implementations, a process for forming the resonator structure includes removing an exposed portion of the piezoelectric layer to define a trench, for instance, by partial etching or performing an isotropic release etch using a XeF2 gas or SF6 plasma. In some other implementations, a portion of a sacrificial layer is removed to define a trench in the piezoelectric layer.</p>
申请公布号 WO2013012638(A1) 申请公布日期 2013.01.24
申请号 WO2012US46293 申请日期 2012.07.11
申请人 QUALCOMM MEMS TECHNOLOGIES, INC.;ZUO, CHENGJIE;YUN, CHANGHAN;LO, CHI SHUN;KIM, JONGHAE 发明人 ZUO, CHENGJIE;YUN, CHANGHAN;LO, CHI SHUN;KIM, JONGHAE
分类号 H03H9/02;H03H3/02;H03H9/17 主分类号 H03H9/02
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