CHARGE TRAP MEMORY DEVICE COMPRISING COMPOSITE OF NANOPARTICLES AND METHOD FOR MANUFACTURING THE SAME

摘要

A charge trap type memory device and its manufacturing method are provided to prevent the aggregation of metallic nano grains and to obtain excellent retention characteristics by using an improved charge trap layer made of a nano grain composite with nano grains and insulating nano grains. A charge trap type memory device includes a substrate(11) and a gate structure on the substrate. The gate structure includes a charge trap layer(23). The charge trap layer is made of a nano grain composite. The nano grain composite of the charge trap layer consists of nano grains(23a) capable of trapping charge and insulating nano grains(23b).