发明名称 |
PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD |
摘要 |
<p>A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer.</p> |
申请公布号 |
KR20130008083(A) |
申请公布日期 |
2013.01.21 |
申请号 |
KR20127031785 |
申请日期 |
2011.05.06 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
SHIMODA TATSUYA;TOKUMITSU EISUKE;MIYASAKO TAKAAKI;KANEDA TOSHIHIKO |
分类号 |
H01L21/336;H01L21/3205;H01L29/78;H01L29/786;H01L41/22;H01L41/318;H01L41/33 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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