| 摘要 |
PURPOSE: A method for depositing an atomic layer is provided to improve a throughput by continuously performing an annealing process in the same chamber. CONSTITUTION: A first deposition gas and a second deposition gas are successively supplied to a substrate. A thin film is deposited(S11). A first reaction material and a second reaction material are successively provided to the substrate on which the thin film is deposited. The thin film is reinforced by reacting with the reaction materials on the surface of the substrate(S12). An exothermic reaction is generated in the first and second reaction materials. [Reference numerals] (AA) Start; (BB) End; (S11) Thin film deposition; (S12) Thin film reinforcement
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