METHOD OF FORMING A FINE PATTERN AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine pattern and a method for manufacturing a semiconductor are provided to improve the uniformity of a pattern size by forming a fine pattern through two patterning processes using line patterns. CONSTITUTION: A first mask pattern(10) includes a first pattern part(10a') and a second pattern part(10b'). The first pattern part and the second pattern part include a plurality of slender patterns(10a,10b). The slender pattern comprising the first pattern part has a first length(L1). The slender pattern comprising the second pattern part has a second length(L2). A second mask pattern(20) includes a first line(20a) and a second line(20b). A hole(30) is formed in an intersection of the first mask pattern and the second mask pattern.