MAGNETIC STACK AND MEMORY CELL COMPRISING SUCH STACK

摘要

PROBLEM TO BE SOLVED: To provide a magnetic stack and a memory cell comprising such a stack.

SOLUTION: The present invention relates to a magnetic stack (4) having an out-of-plane magnetisation. The magnetic stack comprises: a first magnetic layer (1) constituted of one or more materials selected from the following group: cobalt, iron and nickel and magnetic alloys based on the materials; a second layer (2) constituted of a metallic material able to confer a perpendicular anisotropy of interfacial origin when forming a shared interface with material of the first layer; and a third layer (3) deposited on the first layer (1). The second layer (2) is deposited on the third layer (3), and the third layer (3) is constituted of a metallic material having a miscibility less than 10% with the material of the first layer.

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