发明名称 HETEROJUNCTION III-V SOLAR CELL PERFORMANCE
摘要 An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.
申请公布号 US2013014811(A1) 申请公布日期 2013.01.17
申请号 US201113179731 申请日期 2011.07.11
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD 发明人 BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD
分类号 H01L31/06;H01L31/0304 主分类号 H01L31/06
代理机构 代理人
主权项
地址