发明名称 |
HETEROJUNCTION III-V SOLAR CELL PERFORMANCE |
摘要 |
An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.
|
申请公布号 |
US2013014811(A1) |
申请公布日期 |
2013.01.17 |
申请号 |
US201113179731 |
申请日期 |
2011.07.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
发明人 |
BEDELL STEPHEN W.;HEKMATSHOARTABARI BAHMAN;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;SHAHRJERDI DAVOOD |
分类号 |
H01L31/06;H01L31/0304 |
主分类号 |
H01L31/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|