ORGANIC THIN FILM TRANSISTOR AND PRODUCTION METHOD FOR ORGANIC THIN FILM TRANSISTOR

摘要

This organic thin film transistor (10) comprises: a substrate (1); a gate electrode (2) formed upon the substrate (1); a gate insulating film (3) formed upon the gate electrode (2); a source electrode (4) and a drain electrode (5) formed upon the gate insulating film (3); a partition section (6) formed upon the source electrode (4), the drain electrode (5), and the gate insulating film (3) and having an opening that exposes part of the source electrode (4), the drain electrode (5), and the gate insulating film (3); and an organic semiconductor layer (7) formed inside the opening. At least one of either the source electrode (4) or the drain electrode (5) has a first electrode section formed at a first thickness, and a second electrode section exposed from the opening and formed at a second thickness thinner than the first thickness. The organic semiconductor layer (7) is formed across the top surface of the second electrode section and the top surface of the gate insulating film.