| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the contact resistance due to Schottky barrier between a semiconductor layer and a ferromagnetic metal layer and optimize the interface resistance for achieving highly efficient spin injection. <P>SOLUTION: A semiconductor device comprises: a semiconductor layer 10; a ferroelectric metal layer 12 for implanting spin-polarized electrons to the semiconductor layer or receiving spin-polarized electrons from the semiconductor layer; a metal film 16 provided between the semiconductor layer and the ferroelectric metal layer and having a work function smaller than that of the ferroelectric metal layer; and an insulation film 14 provided between the metal film and the semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
