| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory and its testing method capable of testing a malfunction in writing in a short time. <P>SOLUTION: By activating a word line corresponding to a port to be tested and deactivating a precharge signal corresponding to the port to be tested, one of a pair of digit lines corresponding to the port to be tested is caused to be discharged. In a state in which a potential difference between the digit lines after the discharge is maintained, multiple word lines are activated and the pair of digit lines corresponding to the port to be tested are driven in order to write test data in a memory cell. Then, the data is read from the memory cell and it is determined whether the test data has been correctly written. <P>COPYRIGHT: (C)2013,JPO&INPIT |
