APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON

摘要

PROBLEM TO BE SOLVED: To prevent contamination from a heating element, to prevent contamination from a support shaft material and a sealing material between a support shaft and a housing and the deterioration of the sealing material by suppressing the temperature rising of the support shaft and to thereby produce high quality single crystal silicon.

SOLUTION: An apparatus for producing the single crystal silicon comprises: an exothermic ring having a conductive material capable of heating inductively by an induction heating coil and being disposed at the tip end of the rotatable support shaft 11 penetrating the wall of the housing; an operating means for reciprocating the exothermic ring between a heating position which is close to the induction heating coil between a seed crystal holder and a polycrystal holder and a standby position which is separated from the heating position by the rotation of the support shaft 11 at the support shaft 11; a sealing material 21A to hold airtightness at a penetration part between the wall of the housing and the support shaft 11; and a cooling flow path 14 which is formed in the support shaft 11 and in which a cooling medium flows.

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