发明名称 DETECTION DEVICE MANUFACTURING METHOD AND DETECTION DEVICE AND DETECTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a detection device which can reduce the mixing of an organic material getting in the impurity semiconductor layer of a conversion element. <P>SOLUTION: There is provided manufacturing method for a detection device in which a pixel 11 comprises a switch element 13 and a conversion element 12 which includes an impurity semiconductor layer 123 formed on an electrode 122, the switch element 13 and the electrode 122 being connected in contact holes opened in a protective layer 137 consisting of an inorganic material disposed between a plurality of switch elements 13 and a plurality of electrodes 122 and an interlayer insulation layer 120 consisting of an organic material. The manufacturing method comprises: a step of forming an insulation member 121 consisting of an inorganic material so as to cover the interlayer insulation layer 120 between the plurality of electrodes 122; a step of depositing an impurity semiconductor film 123' to cover the insulation member 121 and the plurality of electrodes 122; and a step of forming a coating layer 160 so that a region of the protective layer 137 at which there exists the orthogonal projection of a level difference portion of the electrode 122 located inside the contact hole of the interlayer insulation layer 120 will be coated when the insulation member 121 is formed. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013012715(A) 申请公布日期 2013.01.17
申请号 JP20120089550 申请日期 2012.04.10
申请人 CANON INC 发明人 FUJIYOSHI KENTARO;MOCHIZUKI CHIORI;WATANABE MINORU;OFUJI MASAHITO;YOKOYAMA KEIGO;KAWANABE JUN;WAYAMA HIROSHI
分类号 H01L27/146;H01L27/144;H01L31/09;H04N5/369 主分类号 H01L27/146
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