发明名称 処理方法および記憶媒体
摘要 Disclosed is a processing method that removes moisture in a low permittivity film formed on a substrate to be processed which has a damaged layer on the surface thereof while maintaining the specific permittivity or a leakage current value low when the film is subjected to a recovery processing. The method for the recovery processing includes applying, on the damaged layer of the low permittivity film, a first processing gas whose molecules are small sufficient to permeate the inside of the damaged layer of the low permittivity film and which is able to remove the moisture in the damaged layer and a second processing gas which forms a hydrophobic dense reformatted layer on the surface of the damaged layer, thereby allowing the first processing gas and the second processing gas to react with the damaged layer.
申请公布号 JP5941623(B2) 申请公布日期 2016.06.29
申请号 JP20110068695 申请日期 2011.03.25
申请人 東京エレクトロン株式会社 发明人 清水 渉;前田 清司;永岩 利文
分类号 H01L21/768;H01L21/3065;H01L23/532 主分类号 H01L21/768
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