发明名称 |
Transistor, method of manufacturing transistor, and electronic device including transistor |
摘要 |
Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light.
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申请公布号 |
US8354670(B2) |
申请公布日期 |
2013.01.15 |
申请号 |
US20100801531 |
申请日期 |
2010.06.14 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KIM SANG-WOOK;KIM SUN-IL;KIM CHANG-JUNG;PARK JAE-CHUL |
发明人 |
KIM SANG-WOOK;KIM SUN-IL;KIM CHANG-JUNG;PARK JAE-CHUL |
分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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