发明名称 MEMORY DEVICE HAVING SWITCH PROVIDING VOLTAGE TO BIT LINE
摘要 A memory device in which a circuit reads a cell condition. A terminal provides voltage to a bit line of the circuit via a switch. The circuit outputs and enables storage of a first logical value when the voltage provided from the terminal does not exceed a threshold value. The circuit outputs and enables storage of a second logical value when the voltage provided from the terminal exceeds the threshold value. The output and storage occurs in the absence of an electrical connection between the cell and circuit. The switch provides voltage supplied from the terminal to the bit line of the circuit. The voltage increases from a value which does not exceed the threshold to a value which exceeds the threshold.
申请公布号 US2013010543(A1) 申请公布日期 2013.01.10
申请号 US201113176337 申请日期 2011.07.05
申请人 ELPIDA MEMORY, INC.;MARTINOZZI GIULIO 发明人 MARTINOZZI GIULIO
分类号 G11C29/00;G11C5/14;G11C7/10 主分类号 G11C29/00
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