发明名称 |
SUBSTRATE COMPRISING SI-BASE AND INAS-LAYER |
摘要 |
The present invention relates to a substrate (5) comprising a Si-base (1) and an InAs-layer (4) provided on said Si-base where said InAs-layer (4) has a thickness between 100 and 500 nanometers and root-mean-square roughness of the upper surface of said InAs-layer (4) is below 1 nanometer. The invention further relates to a method for forming said substrate. The invention also relates to growing InAs-nanowires (7) as well as a GaSb-layer (17) on said substrate (5). |
申请公布号 |
WO2012148353(A3) |
申请公布日期 |
2013.01.10 |
申请号 |
WO2012SE50447 |
申请日期 |
2012.04.27 |
申请人 |
QUNANO AB;WERNERSSON, LARS-ERIK;GORJI GHALAMESTANI, SEPIDEH |
发明人 |
WERNERSSON, LARS-ERIK;GORJI GHALAMESTANI, SEPIDEH |
分类号 |
H01L21/02;B82Y10/00;H01L21/20;H01L29/06;H01L29/423 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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